Improved performance of InP-based quantum dot light-emitting diodes by employing a cascading hole injection/transport layer

For achieving high-performance colloidal quantum dot light-emitting diodes (QD-LEDs), maintaining charge neutrality in QDs is essential to prevent nonradiative Auger recombination. In a typical QD-LED, however, the injection rate of electrons surpasses that of holes, deteriorating device efficiency...

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Bibliographic Details
Published in2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) pp. 1 - 3
Main Authors Bae, Yeyun, Lee, Jaeyeop, Roh, Jeongkyun
Format Conference Proceeding
LanguageEnglish
Published IEEE 07.03.2023
Subjects
charge balance
Charge carrier processes
hole injection layer
hole transport layer
Light emitting diodes
Luminescence
Manufacturing
Performance evaluation
QD-LEDs
Quantum dots
Radiative recombination
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Summary:For achieving high-performance colloidal quantum dot light-emitting diodes (QD-LEDs), maintaining charge neutrality in QDs is essential to prevent nonradiative Auger recombination. In a typical QD-LED, however, the injection rate of electrons surpasses that of holes, deteriorating device efficiency and lifetime significantly. Therefore, improving the hole injection property to achieve charge balance in the QD emissive layer is highly required to realize high-performance QD-LEDs. In this study, we employ a cascading hole injection/transport layer (CHL) that comprises \text{TCTA}/\text{TAPC}/\text{HAT}-\text{CN}/\text{MoO}_{3} to improve the hole injection rate into QDs and demonstrate the improved performance of InP-based QD-LEDs. The device with the CHL exhibits increased maximum external quantum efficiency and luminance by a factor of 1.4 and 1.6, respectively, compared to those of the reference device.
DOI:10.1109/EDTM55494.2023.10102977