Flip-chip mounted, Ku band power amplifier compliant with space applications

Following the trends of today's increased power density into power components arena, latest developments on advanced thermal management at component level are presented. Power flip chip technology was applied to commercial HB20P heterostructure bipolar transistor technology from UMS. Results of...

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Published in2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278) Vol. 3; pp. 1389 - 1392 vol.3
Main Authors Vendier, O., Fraysse, J.-P., Schaffauser, C., Paillard, M., Drevon, C., Cazaux, J.-L., Floriot, D., Caillas-Devignes, N., Blanck, H., Auxemery, P., de Ceuninck, W., Petersen, R., Haese, N., Rolland, P.-A.
Format Conference Proceeding Journal Article
LanguageEnglish
Published IEEE 2002
Subjects
Fingers
Gallium arsenide
HEMTs
Heterojunction bipolar transistors
MMICs
Packaging
Power amplifiers
Space technology
Temperature
Thermal management
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Summary:Following the trends of today's increased power density into power components arena, latest developments on advanced thermal management at component level are presented. Power flip chip technology was applied to commercial HB20P heterostructure bipolar transistor technology from UMS. Results of flip-chip mounted high power amplifier on Aluminum Nitride, packaged in a space compatible micro-package are discussed.
Bibliography:SourceType-Scholarly Journals-2
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ISBN:9780780372399
0780372395
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2002.1012114