Quasi-optical Terahertz Devices Based on Silicon in CMOS and BiCMOS Technology

This paper reports on our recent advances in CMOS-based electronic sources and detectors developed for the terahertz frequency range and examples of practical applications. The presented quasi-optical emitter-detector pair systems operate in the 200 - 266 GHz range exhibiting input power-related sig...

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Bibliographic Details
Published in2022 IEEE 2nd Ukrainian Microwave Week (UkrMW) pp. 159 - 164
Main Authors But, Dmytro B., Morkunaite, Ieva, Ivonyak, Yurii, Kolacinski, Cezary, Ikamas, Kestutis, Knap, Wojciech, Lisauskas, Alvydas
Format Conference Proceeding
LanguageEnglish
Published IEEE 14.11.2022
Subjects
BiCMOS integrated circuits
CMOS
Detectors
emitter
Fabrication
imaging
Microwave oscillators
Microwave transistors
Silicon
TeraFET
Terahertz
Voltage-controlled oscillators
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Summary:This paper reports on our recent advances in CMOS-based electronic sources and detectors developed for the terahertz frequency range and examples of practical applications. The presented quasi-optical emitter-detector pair systems operate in the 200 - 266 GHz range exhibiting input power-related signal-to-noise ratio exceeding 70 dB in the direct detection regime for one Hz equivalent noise bandwidth. It combines a high-performance detector based on CMOS field-effect transistors and a voltage-controlled oscillator employing Si or SiGe bipolar transistors provided by the 65 nm CMOS or 130 nm BiCMOS fabrication processes.
DOI:10.1109/UkrMW58013.2022.10037042