Quasi-optical Terahertz Devices Based on Silicon in CMOS and BiCMOS Technology
This paper reports on our recent advances in CMOS-based electronic sources and detectors developed for the terahertz frequency range and examples of practical applications. The presented quasi-optical emitter-detector pair systems operate in the 200 - 266 GHz range exhibiting input power-related sig...
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Published in | 2022 IEEE 2nd Ukrainian Microwave Week (UkrMW) pp. 159 - 164 |
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Main Authors | , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
14.11.2022
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Subjects | |
Online Access | Get full text |
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Summary: | This paper reports on our recent advances in CMOS-based electronic sources and detectors developed for the terahertz frequency range and examples of practical applications. The presented quasi-optical emitter-detector pair systems operate in the 200 - 266 GHz range exhibiting input power-related signal-to-noise ratio exceeding 70 dB in the direct detection regime for one Hz equivalent noise bandwidth. It combines a high-performance detector based on CMOS field-effect transistors and a voltage-controlled oscillator employing Si or SiGe bipolar transistors provided by the 65 nm CMOS or 130 nm BiCMOS fabrication processes. |
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DOI: | 10.1109/UkrMW58013.2022.10037042 |