Novel technique for determining bias, temperature and frequency dependence of FET characteristics

A novel measurement of the dynamics of HEMT and MESFET behavior permits classification of dispersion effects and identifies operating regions that they affect. This reveals a simple structure to the otherwise complicated dynamic behavior that has concerned circuit designers. With this insight, it is...

Full description

Saved in:
Bibliographic Details
Published in2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278) Vol. 2; pp. 993 - 996 vol.2
Main Authors Parker, A.E., Rathmell, J.G.
Format Conference Proceeding Journal Article
LanguageEnglish
Published IEEE 2002
Subjects
Dispersion
FETs
Frequency dependence
Frequency measurement
HEMTs
MESFETs
Pulse measurements
Radio frequency
Temperature dependence
Time measurement
Online AccessGet full text

Cover

More Information
Summary:A novel measurement of the dynamics of HEMT and MESFET behavior permits classification of dispersion effects and identifies operating regions that they affect. This reveals a simple structure to the otherwise complicated dynamic behavior that has concerned circuit designers. With this insight, it is possible to predict biases, temperatures and frequencies that dispersion will or will not affect. It is interesting to note that, for some devices, dispersion effects can be seen to exist at microwave frequencies and may therefore contribute to intermodulation distortion.
Bibliography:SourceType-Scholarly Journals-2
ObjectType-Feature-2
ObjectType-Conference Paper-1
content type line 23
SourceType-Conference Papers & Proceedings-1
ObjectType-Article-3
ISBN:9780780372399
0780372395
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2002.1011796