Effect of Low-Angle Grain-Boundary Passivation in Flexible Single-Crystal-Like Thin-Film GaAs Solar Cells
We theoretically and experimentally study the effect of defect-state passivation at low-angle grain boundaries (LA-GBs) on the photovoltaic performance characteristics of flexible single-crystal-like thin-film GaAs SCs. The 2D modeling of the SCs shows that LA-GBs in the single-crystal-like GaAs sti...
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Published in | 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) pp. 1789 - 1791 |
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Main Authors | , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
20.06.2021
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Subjects | |
Online Access | Get full text |
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Summary: | We theoretically and experimentally study the effect of defect-state passivation at low-angle grain boundaries (LA-GBs) on the photovoltaic performance characteristics of flexible single-crystal-like thin-film GaAs SCs. The 2D modeling of the SCs shows that LA-GBs in the single-crystal-like GaAs still limit their performance, especially for open-circuit voltage (V OC ), and effective passivation of the LA-GBs can boost the photo-conversion efficiency remarkably. Two physical hydrogen-based passivation techniques and a chemical sulfide treatment are employed for the passivation of the LA-GBs in the single-crystal-like GaAs. Current-voltage (I-V) and photoluminescence (PL) characterization studies demonstrate that sulfur by trioctylphosphine sulfide (TOP: S) solution passivation treatment can significantly increase PL peak intensity and the performance characteristics of flexible single-crystal-like GaAs SCs. A substantial improvement is achieved with increases of ~20%, ~10%, ~13%, and ~65% for V OC , short-circuit current (J SC ), fill factor (FF), and overall efficiency, respectively. |
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DOI: | 10.1109/PVSC43889.2021.9519115 |