Reliability and Robustness Performance of 1200 V SiC DMOSFETs
Detailed experimental results from gate oxide reliability and robustness characterization of 1200 V/75 mΩ SiC DMOSFETs are presented. The threshold voltages were stable after 1000 hour +20 V and - 10 V gate bias stress applied at a junction temperature of 175°C. Unclamped inductive switching yielded...
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Published in | 2020 IEEE International Reliability Physics Symposium (IRPS) pp. 1 - 4 |
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Main Authors | , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.04.2020
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Subjects | |
Online Access | Get full text |
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Summary: | Detailed experimental results from gate oxide reliability and robustness characterization of 1200 V/75 mΩ SiC DMOSFETs are presented. The threshold voltages were stable after 1000 hour +20 V and - 10 V gate bias stress applied at a junction temperature of 175°C. Unclamped inductive switching yielded single-pulse avalanche energy of 950 mJ and an avalanche withstand time of 80 μs. The short-circuit withstand time varied from 5 μs for a device with drain saturation current of 5 kA/cm 2 A to 4 μs for a device with drain saturation current of 6 kA/cm 2 . |
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ISSN: | 1938-1891 |
DOI: | 10.1109/IRPS45951.2020.9128225 |