The Influence of the Rapid Thermal Annealing Process on Defect Distribution in GaAsN p-i-n Structures for Solar Cells

A comparative Deep Level Transient Fourier Spectroscopy experiment was conducted to study emission and capture processes in four types of GaAsN semiconductor barrier structures, grown by Atmospheric Pressure Metal Organic Vapor Phase Epitaxy on GaAs substrates. All the examined samples showed a vari...

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Published in2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM) pp. 157 - 160
Main Authors Kosa, A., Drobny, J., Dawidowski, W., Mikolasek, M., Sciana, B., Stuchlikova, L.
Format Conference Proceeding
LanguageEnglish
Published IEEE 11.10.2020
Subjects
Annealing
Energy states
Gallium arsenide
Indium tin oxide
Sociology
Statistics
Transient analysis
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Summary:A comparative Deep Level Transient Fourier Spectroscopy experiment was conducted to study emission and capture processes in four types of GaAsN semiconductor barrier structures, grown by Atmospheric Pressure Metal Organic Vapor Phase Epitaxy on GaAs substrates. All the examined samples showed a variety of deep energy levels, which were examined in relation to structural properties. Activation energies of 14 defect states were evaluated. The electrically active defect analysis and sample comparison verified the positive effects of rapid thermal annealing on the observed defect concentration.
ISSN:2474-9737
DOI:10.1109/ASDAM50306.2020.9393869