Study of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation

The effect of self-heating of GaN HEMTs on low frequency S-parameters has been studied by using TCAD simulation. The Im(Y22) for low frequency S-parameters measurement is useful to study buffer trap in GaN HEMTs. The self-heating effect affects a peak indicated trap in Im(Y22) depending on measureme...

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Published in2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) pp. 1 - 4
Main Authors Otsuka, Tomohiro, Yamaguchi, Yutaro, Shinjo, Shintaro, Oishi, Toshiyuki
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2019
Subjects
GaN
HEMT
low frequency S parameters
self-heating
TCAD
trap
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Summary:The effect of self-heating of GaN HEMTs on low frequency S-parameters has been studied by using TCAD simulation. The Im(Y22) for low frequency S-parameters measurement is useful to study buffer trap in GaN HEMTs. The self-heating effect affects a peak indicated trap in Im(Y22) depending on measurement frequency. The frequency of peak by trap shifts toward higher as channel temperature increase. Moreover, the self-heating effect generates a peak in Im(Y22) vs. frequency. The frequency of peak generated by self-heating effect only is almost constant as channel temperature increase. Furthermore, this TCAD results show good agreement with the measurement results.
DOI:10.1109/BCICTS45179.2019.8972751