High Performance Ultrathin SnO2 Thin-Film Transistors by Sol-Gel Method

• Published in: IEEE electron device letters Vol. 39; no. 8; pp. 1179 - 1182
• Main Authors: Jang, Bongho, Kim, Taegyun, Lee, Sojeong, Lee, Won-yong, Kang, Hongki, Cho, Chan Seob, Jang, Jaewon
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.08.2018; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Annealing; Current ratio; Diodes; Film thickness; Liquid crystals; Metals; Motion pictures; Organic light emitting diodes; quantum confinement; Quaternary alloys; Self alignment; Semiconductor devices; Silicon dioxide; Silicon substrates; SnO; Sol-gel; Sol-gel processes; Substrates; Thin film transistors; Tin dioxide; Transistors
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2018.2849689

Sol-gel processed ultrathin nanostructured SnO 2 thin-film transistors were successfully fabricated on a SiO 2 /Si substrate without using a self-aligned monolayer or high-<inline-formula> <tex-math notation="LaTeX">{k} </tex-math></inline-formula> insulator, which may be unsuitable techniques for the commercial fabrication of complementary metal-oxide-semiconductors. The highest extracted field mobility was approximately 100 cm 2 /V<inline-formula> <tex-math notation="LaTeX">\cdot </tex-math></inline-formula>s. In addition, by controlling the SnO 2 film thickness, we successfully increased the on/off current ratio to ~10 7 . The electrical performance of the proposed transistors is sufficient for high-resolution liquid crystal or organic light-emitting diode displays, which require a high field-effect mobility (>10 cm 2 /V<inline-formula> <tex-math notation="LaTeX">\cdot </tex-math></inline-formula>s) and high on/off current ratio (>10 6 ). Ultrathin SnO 2 is also a promising rare-metal-free starting matrix for ternary and quaternary alloys, showing promising electric properties.