A 22-31 GHz Bidirectional 5G Transceiver Front-End in 28 nm CMOS

A bidirectional transceiver front-end in 28 nm bulk CMOS is presented. A transformer-based T/R switch is used to minimize the area occupation without reducing the linearity and the isolation between the transmitter and receiver paths. The transmitter shows a power gain of 19 dB and an output-referre...

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Bibliographic Details
Published inESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC) pp. 283 - 286
Main Authors Manente, D., Quadrelli, F., Padovan, F., Bassi, M., Mazzanti, A., Bevilacqua, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 13.09.2021
Subjects
28nm CMOS
5G mobile communication
doubly tuned transformer
front-end
Receivers
Switches
T/R switch
transceiver
Transceivers
Transformers
Transmitters
Voltage
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Summary:A bidirectional transceiver front-end in 28 nm bulk CMOS is presented. A transformer-based T/R switch is used to minimize the area occupation without reducing the linearity and the isolation between the transmitter and receiver paths. The transmitter shows a power gain of 19 dB and an output-referred P 1dB of 14 dBm. At the 1 dB compression point the PAE is 18.7%. With a 100 MHz 64-QAM OFDM modulated input signal, the EVM is below 5% up to an average output power of 6.6 dBm, with a corresponding PAE of 7%. The receiver has a minimum NF of 4.9 dB, a voltage gain of 17 dB and an IIP3 of -9.2 dBm, while consuming 35 mW. Both TX and RX feature a very wide passband from 22GHz to 31GHz.
DOI:10.1109/ESSCIRC53450.2021.9567832