Fabrication and Characteristics of Aluminum Oxide MIM Capacitors with Interconnections using BCB-based MEMs Technology

This paper presents the fabrication and characteristics of aluminum oxide metal-insulator-metal (MIM) capacitors in MEMS technology. Atomic Layer Deposition (ALD) technique has been used to form the thin and high-quality aluminum oxide insulator film. Benzocyclobutene (BCB) and Cu interconnects were...

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Published in2020 International Conference on Microwave and Millimeter Wave Technology (ICMMT) pp. 1 - 3
Main Authors Wen, Jia-Ming, Yang, Xiao, Zhang, Cheng-Rui, Zhou, Liang
Format Conference Proceeding
LanguageEnglish
Published IEEE 20.09.2020
Subjects
Aluminum oxide
BCB
capacitance density
Fabrication
Frequency measurement
High frequency
MIM capacitor
MIM capacitors
Q-factor
quality factor
Resonant frequency
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Summary:This paper presents the fabrication and characteristics of aluminum oxide metal-insulator-metal (MIM) capacitors in MEMS technology. Atomic Layer Deposition (ALD) technique has been used to form the thin and high-quality aluminum oxide insulator film. Benzocyclobutene (BCB) and Cu interconnects were used to realize interconnection with its high frequency performance measured. The capacitance value can be obtained from 30 pF to 3 nF with its minimum quadratic voltage linearity of 100 ppm/V 2 . The resonant frequency of 128 MHz for a example of 1.5 nF capacitor has been designed and measured with its quality factor studied. The simulated and measured results of these MIM capacitors show close agreements. These types of MIM capacitors offer the advantages of compact configuration and can be easy integrated with other devices.
DOI:10.1109/ICMMT49418.2020.9386842