Advanced large-signal modeling of GaN-HEMTs

• Published in: Proceedings. IEEE Lester Eastman Conference on High Performance Devices pp. 172 - 180
• Main Authors: Berroth, M., Chigaeva, E., Dettmann, I., Wieser, N., Vogel, W., Roll, H., Scholz, F., Schweizer, H.
• Format: Conference Proceeding
• Language: English
• Published: Piscataway NJ IEEE 2002
• Subjects: Aluminum gallium nitride; Applied sciences; Electronics; Exact sciences and technology; Gallium nitride; HEMTs; MODFETs; Pulse amplifiers; Scattering parameters; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon carbide; Temperature; Thermal conductivity; Thermal resistance; Transistors; Ternary compound; Binary compound; Gallium arsenides; Aluminium nitride; Large signal behavior; Gallium nitride; Modeling; High electron mobility transistor; Wide band; s parameter; Self heating; Comparative study; Transconductance
• ISBN: 9780780374782; 0780374789
• DOI: 10.1109/LECHPD.2002.1146747

For improved non-linear modeling of AlGaN/GaN high electron mobility transistors, a large-signal model originally developed for GaAs-based devices has been extended by introduction of a thermal sub-circuit to account for self-heating. Thereby, DC output characteristics which typically show negative output conductance at a high dissipating power level are well reproduced. Since self-heating also effects the transconductance, which is related to S/sub 21/ at RF conditions, the comparison of broadband S-parameter simulations and measurements revealed significant improvement when using the extended model. First experimental and theoretical investigations on the transient behavior at pulsed conditions are finally presented.