Effect of In and Zn Content on Structural and Electrical Properties of InZnSnO Thin-Film Transistors Using an Yb2TiO5 Gate Dielectric

• Published in: IEEE transactions on electron devices Vol. 64; no. 5; pp. 2233 - 2238
• Main Authors: Tung-Ming Pan, Bo-Jung Peng, Jim-Long Her, Bih-Show Lou
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.05.2017; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Amorphous indium–zin–tin oxide (α-InZnSnO); Dielectrics; Electrical properties; Indium; Logic gates; Plasmas; Semiconductor devices; Thin film transistors; thin-film transistor (TFT); Three-dimensional displays; Threshold voltage; Tin; Tin oxides; X-ray scattering; Yb₂TiO; Zinc
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2017.2680410

In this paper, we investigated the effect of In and Zn content on the structural properties and electrical characteristics of amorphous indium-zinc-tin oxide (α-InZnSnO) thin-film transistors (TFTs) featuring an Yb 2 TiO 5 gate dielectric. The Yb 2 TiO 5 α-InZnSnO TFT prepared at the 30-W condition exhibited better electrical characteristics in terms of a low threshold voltage of 0.52 V, a high I ON /I OFF ratio of 1.1 × 10 8 , a low subthreshold swing of 203 mV/decade, and a large field-effect mobility of 27.9 cm 2 /Vs. We attribute these results to the optimal Zn and Sn content on InZnSnO channel forming a smooth surface and thus reducing density of interface states at the oxide/channel interface.