Design and Simulation of Multiple Quantum well based InGaN/GaN Light Emitting Diode for High power applications

The electrical and optical characteristics of InGaN/GaN based light emitting diodes (LEDs) having V-shaped, trapezoidal and U-shaped quantum well is simulated using TCAD Silvaco software. Comparison of different well shape is studied and simulation results shows that the device with V-shaped quantum...

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Published in2020 5th International Conference on Devices, Circuits and Systems (ICDCS) pp. 109 - 112
Main Authors Saranya, G., Sivamangai, N.M., Priya, B., Begam R., Benazir
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2020
Subjects
Gallium nitride
Indium
InGaN/GaN
Internal Quantum Efficiency
Light emitting diodes
Quantum well devices
Radiative recombination
Shape
Trapezoidal well
U-shaped well
V-shaped well
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Abstract The electrical and optical characteristics of InGaN/GaN based light emitting diodes (LEDs) having V-shaped, trapezoidal and U-shaped quantum well is simulated using TCAD Silvaco software. Comparison of different well shape is studied and simulation results shows that the device with V-shaped quantum well has superior performance in terms of Internal Quantum Efficiency of 80% and optical power of 120 mW for a maximum current of 200 mA when compared with U-shaped and trapezoidal well.
AbstractList The electrical and optical characteristics of InGaN/GaN based light emitting diodes (LEDs) having V-shaped, trapezoidal and U-shaped quantum well is simulated using TCAD Silvaco software. Comparison of different well shape is studied and simulation results shows that the device with V-shaped quantum well has superior performance in terms of Internal Quantum Efficiency of 80% and optical power of 120 mW for a maximum current of 200 mA when compared with U-shaped and trapezoidal well.
Author Begam R., Benazir
Sivamangai, N.M.
Priya, B.
Saranya, G.
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  fullname: Begam R., Benazir
  organization: Rajalakshmi Engineering College,Department of Electronics and Communication Engineering,Chennai,Tamil Nadu,India
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Snippet The electrical and optical characteristics of InGaN/GaN based light emitting diodes (LEDs) having V-shaped, trapezoidal and U-shaped quantum well is simulated...
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StartPage 109
SubjectTerms Gallium nitride
Indium
InGaN/GaN
Internal Quantum Efficiency
Light emitting diodes
Quantum well devices
Radiative recombination
Shape
Trapezoidal well
U-shaped well
V-shaped well
Title Design and Simulation of Multiple Quantum well based InGaN/GaN Light Emitting Diode for High power applications
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