Design and Simulation of Multiple Quantum well based InGaN/GaN Light Emitting Diode for High power applications
The electrical and optical characteristics of InGaN/GaN based light emitting diodes (LEDs) having V-shaped, trapezoidal and U-shaped quantum well is simulated using TCAD Silvaco software. Comparison of different well shape is studied and simulation results shows that the device with V-shaped quantum...
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Published in | 2020 5th International Conference on Devices, Circuits and Systems (ICDCS) pp. 109 - 112 |
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Main Authors | , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.03.2020
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Subjects | |
Online Access | Get full text |
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Summary: | The electrical and optical characteristics of InGaN/GaN based light emitting diodes (LEDs) having V-shaped, trapezoidal and U-shaped quantum well is simulated using TCAD Silvaco software. Comparison of different well shape is studied and simulation results shows that the device with V-shaped quantum well has superior performance in terms of Internal Quantum Efficiency of 80% and optical power of 120 mW for a maximum current of 200 mA when compared with U-shaped and trapezoidal well. |
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ISSN: | 2644-1802 |
DOI: | 10.1109/ICDCS48716.2020.243560 |