Design and Simulation of Multiple Quantum well based InGaN/GaN Light Emitting Diode for High power applications

The electrical and optical characteristics of InGaN/GaN based light emitting diodes (LEDs) having V-shaped, trapezoidal and U-shaped quantum well is simulated using TCAD Silvaco software. Comparison of different well shape is studied and simulation results shows that the device with V-shaped quantum...

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Bibliographic Details
Published in2020 5th International Conference on Devices, Circuits and Systems (ICDCS) pp. 109 - 112
Main Authors Saranya, G., Sivamangai, N.M., Priya, B., Begam R., Benazir
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2020
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Summary:The electrical and optical characteristics of InGaN/GaN based light emitting diodes (LEDs) having V-shaped, trapezoidal and U-shaped quantum well is simulated using TCAD Silvaco software. Comparison of different well shape is studied and simulation results shows that the device with V-shaped quantum well has superior performance in terms of Internal Quantum Efficiency of 80% and optical power of 120 mW for a maximum current of 200 mA when compared with U-shaped and trapezoidal well.
ISSN:2644-1802
DOI:10.1109/ICDCS48716.2020.243560