Coupled dual-layer antenna for optimized 250 GHz silicon CMOS detector
We present a novel planar antenna consisting of two coupled slots and impedance transforming elements for the optimized 250 GHz field-effect-transistor-based detector. The device includes a monolithically integrated silicon MOSFET and the antenna structure fabricated using commercial 180nm Si CMOS t...
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Published in | 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) pp. 1 - 2 |
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Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
28.08.2022
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Subjects | |
Online Access | Get full text |
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Summary: | We present a novel planar antenna consisting of two coupled slots and impedance transforming elements for the optimized 250 GHz field-effect-transistor-based detector. The device includes a monolithically integrated silicon MOSFET and the antenna structure fabricated using commercial 180nm Si CMOS technology. The employment of a double-layer antenna and a single-finger transistor lets us substantially improve device performance. The enhanced detector exhibits a minimum optical noise equivalent power as low as 15 pW/\sqrt{Hz} at 250 GHz. |
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ISSN: | 2162-2035 |
DOI: | 10.1109/IRMMW-THz50927.2022.9895771 |