Coupled dual-layer antenna for optimized 250 GHz silicon CMOS detector

We present a novel planar antenna consisting of two coupled slots and impedance transforming elements for the optimized 250 GHz field-effect-transistor-based detector. The device includes a monolithically integrated silicon MOSFET and the antenna structure fabricated using commercial 180nm Si CMOS t...

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Bibliographic Details
Published in2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) pp. 1 - 2
Main Authors Ikamas, Kestutis, But, Dmytro B., Javadi, Elham, Kolacinski, Cezary, Lisauskas, Alvydas
Format Conference Proceeding
LanguageEnglish
Published IEEE 28.08.2022
Subjects
Detectors
Millimeter wave devices
MOSFET
Performance evaluation
Planar arrays
Silicon
Transistors
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Summary:We present a novel planar antenna consisting of two coupled slots and impedance transforming elements for the optimized 250 GHz field-effect-transistor-based detector. The device includes a monolithically integrated silicon MOSFET and the antenna structure fabricated using commercial 180nm Si CMOS technology. The employment of a double-layer antenna and a single-finger transistor lets us substantially improve device performance. The enhanced detector exhibits a minimum optical noise equivalent power as low as 15 pW/\sqrt{Hz} at 250 GHz.
ISSN:2162-2035
DOI:10.1109/IRMMW-THz50927.2022.9895771