Studies of Bias Temperature Instabilities in 4H-SiC DMOSFETs

Bias Temperature Instability (BTI) measurements were performed on SiC n-channel DMOSFETs. The effects of the BTI stress on the electrical characteristics of the device were studied using slow and fast measurements. The slow Measurements show that the change in threshold voltage (Vth) can be attribut...

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Bibliographic Details
Published in2020 IEEE International Reliability Physics Symposium (IRPS) pp. 1 - 4
Main Authors Ghosh, Amartya, Hao, Jifa, Cook, Michael, Kendrick, Chris, Suliman, Samia A., Hall, Gavin D.R., Kopley, Tom, Awadelkarim, Osama O.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.04.2020
Subjects
DMOS
Interface charge
NBTI
PBTI
Reliability
SiC
Silicon carbide
Temperature
Temperature measurement
Threshold voltage
Velocity measurement
Voltage measurement
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Summary:Bias Temperature Instability (BTI) measurements were performed on SiC n-channel DMOSFETs. The effects of the BTI stress on the electrical characteristics of the device were studied using slow and fast measurements. The slow Measurements show that the change in threshold voltage (Vth) can be attributed to charge carrier trapping/de-trapping at border traps, while interface trapped charge density is found to be unaffected. The fast measurements, however, shows significant Vth recovery taking place in-situ during measurement. Moreover, Vth shift is observed to decrease with increasing temperature for the same stress level suggesting that Vth recovery is temperature activated.
ISSN:1938-1891
DOI:10.1109/IRPS45951.2020.9128318