Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS2-Interlayer-MoS2 Tunneling Junctions

• Published in: IEEE transactions on nuclear science Vol. 66; no. 1; pp. 420 - 427
• Main Authors: Pan Wang, Perini, Christopher J., O'Hara, Andrew, Huiqi Gong, Pengfei Wang, En Xia Zhang, Mccurdy, Michael W., Fleetwood, Daniel M., Schrimpf, Ronald D., Pantelides, Sokrates T., Vogel, Eric M.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.01.2019; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: 2-D; Aluminum oxide; Boron; Boron nitride; Charge transport; Conduction; Defects; density-functional theory (DFT); Dielectrics; Hafnium compounds; Hafnium oxide; Heterostructures; hexagonal boron nitride (h-BN); HfO; Interlayers; Irradiation; Junctions; Molybdenum; Molybdenum disulfide; molybdenum disulfide (MoS₂) tunnel junction; Photoelectric effect; Photoelectric emission; Proton damage; Proton irradiation; Protons; Radiation; Radiation damage; Radiation effects; Tunneling; X ray irradiation; X-ray
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2018.2879632

Tunneling-dominated charge transport is demonstrated in vertically stacked MoS 2 /interlayer/MoS 2 heterostructures with Al 2 O 3 , hexagonal boron nitride (h-BN), and HfO 2 dielectrics. All devices are highly resistant to 10-keV X-ray irradiation. Only small transient changes in X-ray-induced photocurrent are observed as a result of trap creation in the thin interlayer dielectric, with rapid passivation. Samples with Al 2 O 3 and h-BN interlayer dielectrics show significant increases in conduction current during proton irradiation, due to displacement-damage-induced defects that lower the effective tunnel-barrier height. Density-functional-theory calculations provide insights into the pertinent defects. Devices with HfO 2 interlayer dielectrics show great promise for use in radiation tolerant, ultimately scaled tunnel FETs.