Feasibility Study of Scanning Photocurrent Microscopy in Ultra-Thin Silicon Nanowire Ohmic-Contact Devices

The feasibility of the carrier decay length extraction from scanning photocurrent profiles in ultra-thin silicon nanowire ohmic-contact devices is theoretically studied. Accurate carrier decay length can be extracted with a typical diffraction-limited excitation spot size of 500 nm for silicon nanow...

Full description

Saved in:
Bibliographic Details
Published in2019 24th Microoptics Conference (MOC) pp. 270 - 271
Main Authors Chu, Cheng-Hao, Mao, Ming-Hua
Format Conference Proceeding
LanguageEnglish
Published The Japan Society of Applied Physics 01.11.2019
Online AccessGet full text

Cover

More Information
Summary:The feasibility of the carrier decay length extraction from scanning photocurrent profiles in ultra-thin silicon nanowire ohmic-contact devices is theoretically studied. Accurate carrier decay length can be extracted with a typical diffraction-limited excitation spot size of 500 nm for silicon nanowires with diameter down to 20 nm.
DOI:10.23919/MOC46630.2019.8982753