Orientation Dependent Structural Facet Recognition Method in Anisotropic Wet Etching on R-plane Single Crystal Sapphire

Considering the special effect of patterned r-plane sapphire substrate for the growth of nonpolar GaN, a model is proposed by introducing a modified Wulff- Joccodine method to identify the topography of structural facets. The r-plane sapphire etching field is obtained by rotating the c-plane sapphir...

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Bibliographic Details
Published in2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) pp. 1 - 3
Main Authors Yao, Jiabao, Qian, Jin, Qiu, Xiaoli, Xing, Yan
Format Conference Proceeding
LanguageEnglish
Published IEEE 08.04.2021
Subjects
Fabrication
Face recognition
Fitting
Numerical models
Offset rectangular trench
Orientation dependent etching
Predictive models
r-plane sapphire
Surfaces
Wet etching
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DOI10.1109/EDTM50988.2021.9421058

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Summary:Considering the special effect of patterned r-plane sapphire substrate for the growth of nonpolar GaN, a model is proposed by introducing a modified Wulff- Joccodine method to identify the topography of structural facets. The r-plane sapphire etching field is obtained by rotating the c-plane sapphire etch rate hemisphere, resulting in different structural characteristics. The proposed model provides a reliable prediction of microstructure topography by key orientations etched on r-plane sapphire and explains their morphological evolution process.
DOI:10.1109/EDTM50988.2021.9421058