High performances 3D heterogeneous integrated devices based on 3D silicon capacitive interposer

One of the key issues in today's 3D integration topic is to correctly design and assemble silicon-related technologies (ICs, IPDs, Si-interposers and so on) with non-silicon-related technologies (ceramic components, plastic molded chips, crystal oscillators as examples), in a structure that tak...

Full description

Saved in:
Bibliographic Details
Published in2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC) pp. 266 - 267
Main Authors Jatlaoui, Mohamed Mehdi, Muller, Charles
Format Conference Proceeding
LanguageEnglish
Published IEEE 02.12.2020
Subjects
Capacitors
DC-DC power converters
Heterogeneous assembly
Integrated circuits
Integrated Passive Devices
Radio frequency
Silicon
Silicon Interposer with Embedded Trench Capacitors
Three-dimensional displays
Through-Silicon Via
Through-silicon vias
Wafer Level Chip Scale Package
Online AccessGet full text

Cover

More Information
Summary:One of the key issues in today's 3D integration topic is to correctly design and assemble silicon-related technologies (ICs, IPDs, Si-interposers and so on) with non-silicon-related technologies (ceramic components, plastic molded chips, crystal oscillators as examples), in a structure that takes advantage of the silicon base, like thin-pitch TSVs, RDL or WLCSP. Such structure would help moving from the COB era, to a real 3D heterogeneous platform era. Two successful examples, with high integration level and optimized performances, will be detailed in this paper.
DOI:10.1109/EPTC50525.2020.9315000