High performances 3D heterogeneous integrated devices based on 3D silicon capacitive interposer
One of the key issues in today's 3D integration topic is to correctly design and assemble silicon-related technologies (ICs, IPDs, Si-interposers and so on) with non-silicon-related technologies (ceramic components, plastic molded chips, crystal oscillators as examples), in a structure that tak...
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Published in | 2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC) pp. 266 - 267 |
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Main Authors | , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
02.12.2020
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Subjects | |
Online Access | Get full text |
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Summary: | One of the key issues in today's 3D integration topic is to correctly design and assemble silicon-related technologies (ICs, IPDs, Si-interposers and so on) with non-silicon-related technologies (ceramic components, plastic molded chips, crystal oscillators as examples), in a structure that takes advantage of the silicon base, like thin-pitch TSVs, RDL or WLCSP. Such structure would help moving from the COB era, to a real 3D heterogeneous platform era. Two successful examples, with high integration level and optimized performances, will be detailed in this paper. |
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DOI: | 10.1109/EPTC50525.2020.9315000 |