On the effect of quantum capacitance in graphene FET THz detectors

We analyze the impact of quantum capacitance on the response of graphene-based field effect transistors operating as THz detectors. Resulting from its atomically thin body and its particular band structure, quantum capacitance in graphene has a different behavior than that in bulk-semiconductor two-...

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Bibliographic Details
Published in2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) pp. 1 - 2
Main Authors Hasan, Mehdi, Sensale-Rodriguez, Berardi
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2019
Subjects
Charge carrier density
Detectors
Field effect transistors
Graphene
Impurities
Quantum capacitance
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Summary:We analyze the impact of quantum capacitance on the response of graphene-based field effect transistors operating as THz detectors. Resulting from its atomically thin body and its particular band structure, quantum capacitance in graphene has a different behavior than that in bulk-semiconductor two-dimensional electron gases. Furthermore, we analyze and identify non-homogeneities and impurities, which in practice lead to a finite minimum effective charge density as well as to a finite minimum conductivity, as an effect that can degrade the predicted theoretical performance of graphene-based THz devices.
ISSN:2162-2035
DOI:10.1109/IRMMW-THz.2019.8874297