High-Power Flip-Chip Bonded Photodiode Working at 1064nm

We demonstrate back-illuminated flip-chip-bonded modified uni-traveling carrier photodiodes designed for operation at 1064 nm wavelength. The bandwidth is 40 GHz and the RF output power is 23.5 dBm at 25 GHz. The photodiode has responsivity of 0.46 A/W at 1064 nm and low dark current of 2 nA at -8 V...

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Bibliographic Details
Published in2019 IEEE Photonics Conference (IPC) pp. 1 - 2
Main Authors Peng, Yiwei, Zang, Jizhao, Sun, Keye, Yang, Zhanyu, Campbell, Joe C.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2019
Subjects
Bandwidth
Capacitance
Dark current
Flip-chip devices
Photodiodes
Power generation
Radio frequency
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Summary:We demonstrate back-illuminated flip-chip-bonded modified uni-traveling carrier photodiodes designed for operation at 1064 nm wavelength. The bandwidth is 40 GHz and the RF output power is 23.5 dBm at 25 GHz. The photodiode has responsivity of 0.46 A/W at 1064 nm and low dark current of 2 nA at -8 V.
ISSN:2575-274X
DOI:10.1109/IPCon.2019.8908326