Graphene Based Tunnel Field Effect Transistor for RF Applications

• Published in: Progress in Electromagnetics Research Symposium pp. 256 - 259
• Main Authors: Vijh, Manjula, Gupta, R. S., Pandey, Sujata
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.06.2019
• Subjects: Field effect transistors; Graphene; Logic gates; Performance evaluation; Radio frequency; Springs
• ISSN: 1559-9450
• DOI: 10.1109/PIERS-Spring46901.2019.9017872

Graphene has been identified as one of the convincing materials in the field of device modeling and research. Due to its magnificent electronic properties, Graphene has been extensively studied and analysed as a promising material for RF applications. As device dimensions are scaling down, the performance of conventional Metal Oxide Semiconductor Field Effect Transistor is limited due to short channel effects. A new class of devices called Tunnel Field Effect Transistors have been recognised which have surpassed conventional MOSFETs. Tunnel FETs work on the principle of band to band tunneling and have been a subject of research in the field of semiconductors. Different design geometries and different channel materials have been explored by researchers to enhance the performance of the device. Graphene has been identified as a promising channel material in the design of tunnel field effect transistors. A Graphene TFET has been simulated and analysed in this work for its use in RF applications. The device is studied for various electrical characteristics and small signal parameters are obtained. Cut-off frequency of the device has been calculated. It has been observed that Graphene based Tunnel FETs prove to be excellent candidates for high frequency applications.