Comparison of P, As & Sb doped Polycrystalline CdTe Solar Cells

Copper-free polycrystalline CdTe solar cells doped with either Phosphorus, Arsenic or Antimony are compared for dopability, device performance and defect properties. In-situ doping of CdTe with group-V elements was carried out using vapor transport deposition followed by CdCl2 heat treatment. Unifor...

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Published in2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) pp. 0019 - 0020
Main Authors Grover, Sachit, Li, Xiaoping, Lu, Dingyuan, Mallick, Rajni, Xiong, Gang, Gloeckler, Markus
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2019
Subjects
acceptor doping
Antimony
Arsenic
CdTe solar cells
dopant activation
dopant ionization
Phosphorus
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Summary:Copper-free polycrystalline CdTe solar cells doped with either Phosphorus, Arsenic or Antimony are compared for dopability, device performance and defect properties. In-situ doping of CdTe with group-V elements was carried out using vapor transport deposition followed by CdCl2 heat treatment. Uniform carrier concentration in ~10 16 cm -3 range is achieved for all three dopants. Compatibility with CdSeTe ternary alloy is demonstrated and comparable quantum efficiency for all three dopants suggests that either dopant could serve as a replacement for copper. These results are compared with previously reported carrier concentration values for group-V doping of sx- and px- CdTe. Theoretical calculation for maximum carrier concentration based on acceptor energy level suggests least ionization of Antimony. Compensation worsens the achievable majority carrier concentration despite high acceptor doping.
DOI:10.1109/PVSC40753.2019.8980934