Prototyping and characterization of radiation hardened SiC MOS structures

This study shall be considered as preparatory work supporting the planned development of discrete European radiation-hardened SiC power-MOSFETs for space applications. It's based on prototyping and manufacturing elementary structures that have been submitted to DC, AC, stability characterizatio...

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Bibliographic Details
Published in2019 European Space Power Conference (ESPC) pp. 1 - 8
Main Authors Pintacuda, Francesco, Cantarella, Vincenzo, Muschitiello, Michele, Massetti, Silvia
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2019
Subjects
Aging
Annealing
body-drain junction
gate
Ions
Logic gates
MOSFET
Radiation effects
SEE
SiC
Silicon carbide
total dose
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Summary:This study shall be considered as preparatory work supporting the planned development of discrete European radiation-hardened SiC power-MOSFETs for space applications. It's based on prototyping and manufacturing elementary structures that have been submitted to DC, AC, stability characterizations and radiation tests, in order to study the contributions of any basic element that composes the MOSFET structure to radiation sensitivity in a dedicated way.
DOI:10.1109/ESPC.2019.8931985