RESURF stepped oxide (RSO) MOSFET for 85V having a record-low specific on-resistance

• Published in: 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs pp. 185 - 188
• Main Authors: KOOPS, G. E. J, HIJZEN, E. A, HUETING, R. J. E, IN 'T ZANDT, M. A. A
• Format: Conference Proceeding
• Language: English
• Published: Tokyo IEEE 2004; IEEE Japan
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Power MOSFETs; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Surface field; Charge density; Breakdown voltage; MOSFET; Electric breakdown; Trench technology; Thick film; Oxide layer; Doping; Capacitance; Damaging
• ISBN: 9784886860606; 4886860605
• DOI: 10.1109/WCT.2004.239902

A RESURF stepped oxide (RSO) transistor is presented and electrically characterised. The processed RSO MOSFET includes a trench field-plate network in the drift region that is isolated with a thick oxide layer. This trench network has a hexagonal layout that induces an improved RESURF effect at breakdown compared with the more common stripe (2D) layout. Consequently, the effective doping can be two times higher for the hexagonal layout. We have obtained a record value for the specific on-resistance (R/sub ds,on/) of 58 m/spl Omega/.mm/sup 2/ at V/sub gs/=10 V for a breakdown voltage (BV/sub ds/,) of 85 V. These values have been obtained for devices having a 4.0 /spl mu/m cell pitch and a 5 /spl mu/m long drift region with a doping level of 2.10/sup 16/ cm/sup -3/. Measurements of the gate-drain charge density (Q/sub gd/) for these devices show that Q/sub gd/ is fully dominated by the oxide capacitance of the field-plate along the drift region.