Temperature Measurement of RF Power Amplifier

• Published in: 2021 IEEE 19th International Power Electronics and Motion Control Conference (PEMC) pp. 622 - 628
• Main Authors: Baba, Sebastian, Jasinski, Marek, Zelechowski, Marcin
• Format: Conference Proceeding
• Language: English
• Published: IEEE 25.04.2021
• Subjects: Electromagnetic Compatibility and Interference; Industrial Electronics; Performance evaluation; Power measurement; Power supplies; Semiconductor device measurement; Temperature distribution; Temperature measurement; Temperature sensors
• ISSN: 2473-0165
• DOI: 10.1109/PEMC48073.2021.9432633

Nowadays, end users of power electronic converters require not only the best quality, excellent performance and high efficiency, but also, as the most important parameter, reliability [1]. In the case of power semiconductors, a very essential element of each power converter, the main stressor is junction temperature (maximum value and amplitude of temperature swing), since it greatly accelerates degradation mechanisms, which significantly reduces device lifetime [2]. These facts lead to the obvious conclusion that the temperature of power semiconductors should be measured during start-up and qualification testing of newly developed power supplies, to assess stress levels to which these critical components are subjected. In the case of power supplies operating at high power levels (30 - 120 kW) and high frequencies (4 - 13.56 MHz) even simple temperature measurement becomes a challenge [3]. This paper presents the design process of a robust data logging system, immune to the presence of a heavily distorted electromagnetic field, and its performance in comparison to commercial solutions.