Crystal-Orientation-Tolerant Voltage Regulator using Monolithic 3D BEOL FinFETs in Single-Crystal Islands for On-Chip Power Delivery Network

A single-crystal-island (SCI) technique is demonstrated using low thermal budget pulse laser process to fabricate single-crystal islands for monolithic 3D back-end-of-line (BEOL) FinFET circuits. The single-crystallinity are verified with SECCO etch, HREM, TEM, and EBSD. BEOL FinFETs fabricated in t...

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Published in2020 IEEE International Electron Devices Meeting (IEDM) pp. 40.6.1 - 40.6.4
Main Authors Huang, Po-Tsang, Liu, Yu-Wei, Lai, Kuan-Fu, Lan, Yun-Ping, Tsai, Tzung-Han, Shih, Bo-Jheng, Hsieh, Ping-Yi, Yang, Chih-Chao, Shen, Chang-Hong, Shieh, Jia-Min, Chang, Da-Chiang, Chen, Kuan-Neng, Yeh, Wen-Kuan, Hu, Chenming
Format Conference Proceeding
LanguageEnglish
Published IEEE 12.12.2020
Subjects
Field effect transistors
FinFETs
Regulators
Resource management
Silicon
Three-dimensional displays
Voltage control
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Summary:A single-crystal-island (SCI) technique is demonstrated using low thermal budget pulse laser process to fabricate single-crystal islands for monolithic 3D back-end-of-line (BEOL) FinFET circuits. The single-crystallinity are verified with SECCO etch, HREM, TEM, and EBSD. BEOL FinFETs fabricated in the designed single-crystal Si islands exhibit excellent electrical performance and low intra-island variability. To mitigate the effects of island-to-island device variation due to random island crystal orientations, crystal-orientation-tolerant voltage regulator is further proposed by allocating power gating (PG) cells among multiple Si islands, and 42% power noise suppression can be achieved.
ISSN:2156-017X
DOI:10.1109/IEDM13553.2020.9372129