MBE Growth and Characterization of InAlGaAs/GaAs Quantum Dots

InAlGaAs/GaAs quantum dots (QDs) are grown by molecular beam epitaxy and subsequently characterized to achieve emission \lt 1\ \mum. Growth parameters are optimized to grow a new generation of homogeneous quaternary QDs with a PL FWHM of \sim 60\ \mathrm{meV} and a surface density of \gt10^{10} \mat...

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Published in2021 IEEE Research and Applications of Photonics in Defense Conference (RAPID) pp. 1 - 2
Main Authors Arefin, Riazul, Lee, Seunghyun, Jung, Hyemin, Ha, Jaedu, Kim, Jong Su, Krishna, Sanjay, Arafin, Shamsul
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.08.2021
Subjects
AFM
energy states
Laser radar
Molecular beam epitaxial growth
molecular beam epitaxy
Optical sensors
photoluminescence
Quantum dot
Quantum dot lasers
Quantum dots
Quantum mechanics
Stimulated emission
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Summary:InAlGaAs/GaAs quantum dots (QDs) are grown by molecular beam epitaxy and subsequently characterized to achieve emission \lt 1\ \mum. Growth parameters are optimized to grow a new generation of homogeneous quaternary QDs with a PL FWHM of \sim 60\ \mathrm{meV} and a surface density of \gt10^{10} \mathrm{~cm}^{-2}.
DOI:10.1109/RAPID51799.2021.9521407