MOS-like approach for compact modeling of High-Electron-Mobility Transistor
High-Electron-Mobility Transistor (HEMT) with Al- GaN/GaN gate stack is a promising candidate for high-speed and high-power applications. Recent HEMT compact modeling works have proposed threshold-based [1] and surface-potential-based models [2]. In the latter approach, inversion charge is calculate...
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Published in | 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) pp. 221 - 224 |
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Main Authors | , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
The Japan Society of Applied Physics
23.09.2020
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Subjects | |
Online Access | Get full text |
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Summary: | High-Electron-Mobility Transistor (HEMT) with Al- GaN/GaN gate stack is a promising candidate for high-speed and high-power applications. Recent HEMT compact modeling works have proposed threshold-based [1] and surface-potential-based models [2]. In the latter approach, inversion charge is calculated from the quantum expression of a 2-dimensional electron gas (2DEG). Here, we investigate the possibility to model HEMTs with a MOSFET-like approach whereby quantum confinement is included as an effective bandgap widening in the surface potential equation. We evidence that such a MOSFET-like approach leads to a more accurate description over the whole polarization range, especially in the moderate inversion regime. This analytical model is validated by Poisson-Schrödinger numerical simulations. Furthermore, to address a specific feature of HEMT devices, a field plate model is also presented. |
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ISSN: | 1946-1577 |
DOI: | 10.23919/SISPAD49475.2020.9241679 |