MOS-like approach for compact modeling of High-Electron-Mobility Transistor

High-Electron-Mobility Transistor (HEMT) with Al- GaN/GaN gate stack is a promising candidate for high-speed and high-power applications. Recent HEMT compact modeling works have proposed threshold-based [1] and surface-potential-based models [2]. In the latter approach, inversion charge is calculate...

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Published in2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) pp. 221 - 224
Main Authors Vaysset, Adrien, Martinie, Sebastien, Triozon, Francois, Rozeau, Olivier, Jaud, Marie-Anne, Escoffier, Rene, Poiroux, Thierry
Format Conference Proceeding
LanguageEnglish
Published The Japan Society of Applied Physics 23.09.2020
Subjects
compact model
Data models
Fitting
GaN
HEMT
HEMTs
Mathematical model
Numerical models
Potential well
Power device
Semiconductor process modeling
SPICE
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Summary:High-Electron-Mobility Transistor (HEMT) with Al- GaN/GaN gate stack is a promising candidate for high-speed and high-power applications. Recent HEMT compact modeling works have proposed threshold-based [1] and surface-potential-based models [2]. In the latter approach, inversion charge is calculated from the quantum expression of a 2-dimensional electron gas (2DEG). Here, we investigate the possibility to model HEMTs with a MOSFET-like approach whereby quantum confinement is included as an effective bandgap widening in the surface potential equation. We evidence that such a MOSFET-like approach leads to a more accurate description over the whole polarization range, especially in the moderate inversion regime. This analytical model is validated by Poisson-Schrödinger numerical simulations. Furthermore, to address a specific feature of HEMT devices, a field plate model is also presented.
ISSN:1946-1577
DOI:10.23919/SISPAD49475.2020.9241679