Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs

In this study, the thick copper metallization with WNx as diffusion barrier is investigated for AlGaN/GaN HEMTs. The device current density, transconductance, ft, fmax, noise Figure were evaluated for the device with and without thick copper interconnect metal, and the thermal stability test was per...

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Published in2019 14th European Microwave Integrated Circuits Conference (EuMIC) pp. 68 - 71
Main Authors Lin, Y. C., Lee, M. W., Tsai, M. Y., Wang, C., Yao, J. N., Huang, T. J., Hsu, H. T., Maa, J. S., Chang, Edward Y.
Format Conference Proceeding
LanguageEnglish
Published European Microwave Association (EuMA) 01.09.2019
Subjects
AlGaN/GaN HEMT
Aluminum gallium nitride
Copper
copper metallization
HEMTs
interconnect metal
low noise figure
Metallization
MODFETs
thermal stability
Wide band gap semiconductors
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Summary:In this study, the thick copper metallization with WNx as diffusion barrier is investigated for AlGaN/GaN HEMTs. The device current density, transconductance, ft, fmax, noise Figure were evaluated for the device with and without thick copper interconnect metal, and the thermal stability test was performed after the device with copper metallization.
DOI:10.23919/EuMIC.2019.8909414