Bias Temperature Instability Depending on Body Bias through Buried Oxide (BOX) Layer in a 65 nm Fully-Depleted Silicon-On-Insulator Process

Bias temperature instability (BTI) depending on body bias through the buried oxide (BOX) layer was measured using ring oscillators at nominal gate-source voltage. BTI through the BOX layer becomes dominant on OFF-state transistors by applying reverse body bias (RBB) even at nominal gate-source volta...

Full description

Saved in:
Bibliographic Details
Published in2021 IEEE International Reliability Physics Symposium (IRPS) pp. 1 - 6
Main Authors Kishida, Ryo, Suda, Ikuo, Kobayashi, Kazutoshi
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2021
Subjects
bias temperature instability (BTI)
Degradation
Logic gates
reverse body bias (RBB)
ring oscillator (RO)
Ring oscillators
Silicon-on-insulator
Temperature dependence
Temperature measurement
Voltage measurement
Online AccessGet full text

Cover

More Information
Summary:Bias temperature instability (BTI) depending on body bias through the buried oxide (BOX) layer was measured using ring oscillators at nominal gate-source voltage. BTI through the BOX layer becomes dominant on OFF-state transistors by applying reverse body bias (RBB) even at nominal gate-source voltage. BTI-induced degradation is accelerated by RBB, which is opposite to previous results at which only ON-state transistors were measured. The degradation rate at 1.0 V RBB is more than 5x larger than that in zero body bias.
ISSN:1938-1891
DOI:10.1109/IRPS46558.2021.9405121