A 500 mV, 4.5 mW, 16 GHz VCO with 33.3% FTR, designed for 5G applications

In this paper, we present the design methodology and measurement results of a low-power, ultra-wide range Voltage Controlled Oscillator (VCO), with frequency range varying from 13. 1-18.4GHz. The design is fabricated in the 22-nm fully depleted Silicon-on-Insulator (FDSOI) CMOS technology from Globa...

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Published in2020 IEEE Nordic Circuits and Systems Conference (NorCAS) pp. 1 - 4
Main Authors Kumar, Piyush, Stajic, Dario, Bohme, Enno, Isa, Erkan Nevzat, Maurer, Linus
Format Conference Proceeding
LanguageEnglish
Published IEEE 27.10.2020
Subjects
22-nm FDSOI
CMOS
Frequency measurement
Globalfoundaries
Inductors
IOT
Ku band
Low power design
Low-Power
milli-meter Wave
Oscillator
Phase noise
Radio frequency
Silicon-on-insulator
Transceiver
Tuning
VCO
Voltage-controlled oscillators
WAIC (Wireless-Avionics Intra Communication)
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Summary:In this paper, we present the design methodology and measurement results of a low-power, ultra-wide range Voltage Controlled Oscillator (VCO), with frequency range varying from 13. 1-18.4GHz. The design is fabricated in the 22-nm fully depleted Silicon-on-Insulator (FDSOI) CMOS technology from Globalfoundaries. The VCO is interfaced with a cascode butter. The physical insights of the super-low-threshold-voltage transistors with adaptive back-gate-biasing is used in the design implementation. The fabricated chip is characterized on the wafer-probe station using manual and automated measurements. The VCO exhibits a frequency-tuning ratio (FTR) of 33.3 % and a power consumption of \approx4.5mW with a supply voltage of 500 mV and back gate bias voltage of 500 mV.
DOI:10.1109/NorCAS51424.2020.9265006