Nonlinearity of ultrafast anomalous Hall currents in GaAs

We induce ultrafast anomalous Hall currents in GaAs by above-bandgap optical femtosecond excitation at various temperatures, excitation energies and magnetic fields. The currents' dynamics is studied by detecting the simultaneously emitted THz radiation. A linear behavior is obtained at room te...

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Bibliographic Details
Published in2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) pp. 1 - 2
Main Authors Dresler, C., Bieler, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2019
Subjects
Gallium arsenide
Magnetic fields
Magnetic force microscopy
Microscopy
Photonic band gap
Photonics
Ultrafast optics
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Summary:We induce ultrafast anomalous Hall currents in GaAs by above-bandgap optical femtosecond excitation at various temperatures, excitation energies and magnetic fields. The currents' dynamics is studied by detecting the simultaneously emitted THz radiation. A linear behavior is obtained at room temperature and low magnetic fields. However, at higher magnetic fields and both, room and low temperatures, we enter a highly nonlinear regime, in which the current dynamics drastically varies. Most likely, this variation results from different microscopic mechanisms which compete against each other.
ISSN:2162-2035
DOI:10.1109/IRMMW-THz.2019.8873895