Interpolating wavelet scheme toward global modeling of microwave circuits
We use an interpolating wavelet scheme to solve the nonlinear partial differential equations that characterize the behavior of semiconductor devices. We apply this method to a typical field effect transistor. The I-V characteristics are obtained and the accuracy is compared with the basic finite dif...
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Published in | 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017) Vol. 1; pp. 375 - 378 vol.1 |
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Main Authors | , |
Format | Conference Proceeding Journal Article |
Language | English |
Published |
IEEE
2000
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Subjects | |
Online Access | Get full text |
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Summary: | We use an interpolating wavelet scheme to solve the nonlinear partial differential equations that characterize the behavior of semiconductor devices. We apply this method to a typical field effect transistor. The I-V characteristics are obtained and the accuracy is compared with the basic finite difference scheme. An error of 2% is obtained with 90% reduction in the number of unknowns at steady state. This is the first step toward a unified numerical technique that uses wavelets to solve Maxwell's equations and the semiconductor equations for global modeling of high-frequency circuits. |
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Bibliography: | SourceType-Scholarly Journals-2 ObjectType-Feature-2 ObjectType-Conference Paper-1 content type line 23 SourceType-Conference Papers & Proceedings-1 ObjectType-Article-3 |
ISBN: | 078035687X 9780780356870 |
ISSN: | 0149-645X 2576-7216 |
DOI: | 10.1109/MWSYM.2000.861025 |