Interpolating wavelet scheme toward global modeling of microwave circuits

We use an interpolating wavelet scheme to solve the nonlinear partial differential equations that characterize the behavior of semiconductor devices. We apply this method to a typical field effect transistor. The I-V characteristics are obtained and the accuracy is compared with the basic finite dif...

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Published in2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017) Vol. 1; pp. 375 - 378 vol.1
Main Authors Goasguen, S., El-Ghazaly, S.M.
Format Conference Proceeding Journal Article
LanguageEnglish
Published IEEE 2000
Subjects
Finite difference methods
Interpolation
Maxwell equations
Microwave circuits
Microwave devices
Moment methods
Multiresolution analysis
Nonlinear equations
Time domain analysis
Wavelet coefficients
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Summary:We use an interpolating wavelet scheme to solve the nonlinear partial differential equations that characterize the behavior of semiconductor devices. We apply this method to a typical field effect transistor. The I-V characteristics are obtained and the accuracy is compared with the basic finite difference scheme. An error of 2% is obtained with 90% reduction in the number of unknowns at steady state. This is the first step toward a unified numerical technique that uses wavelets to solve Maxwell's equations and the semiconductor equations for global modeling of high-frequency circuits.
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ISBN:078035687X
9780780356870
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2000.861025