A Poly-Si Gate Carbon Nanotube Field Effect Transistor for High Frequency Applications

We are reporting a novel carbon nanotube field effect transistor with a poly-Si bottom gate structure. The device has a gate length of 3µm and achieves a unity gain frequency f T of 2.5GHz and a maximum oscillation frequency f max of >5GHz. The high frequency performance of the device is attribut...

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Bibliographic Details
Published inIEEE MTT-S International Microwave Symposium Digest, 2005 pp. 303 - 306
Main Authors Kim, Sunkook, Choi, Tae-Young, Rabieirad, Laleh, Jeon, Jong-Hyeok, Shim, Moonsub, Mohammadi, Saeed
Format Conference Proceeding
LanguageEnglish
Published IEEE 17.06.2005
Subjects
Ballistic transport
carbon nanotube
Carbon nanotubes
CNTFETs
field effect transistor
High frequency
Logic gates
nanotechnology
Performance evaluation
poly-silicon
Transistors
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Summary:We are reporting a novel carbon nanotube field effect transistor with a poly-Si bottom gate structure. The device has a gate length of 3µm and achieves a unity gain frequency f T of 2.5GHz and a maximum oscillation frequency f max of >5GHz. The high frequency performance of the device is attributed to the ballistic transport of electrons inside the nanotube and is expected to improve by reducing the gate length.
ISBN:9780780388451
0780388453
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2005.1516586