Modeling and Simulation of Si IGBTs

Technology CAD (TCAD) has been recognized as a powerful design tool for Si insulated gate bipolar transistors (IGBTs). Here, physical models, such as a mobility model for carrier-carrier scattering, were investigated for a predictive TCAD. Simulated currentvoltage characteristics of the trench-gate...

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Published in2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) pp. 129 - 132
Main Authors Shigyo, N., Watanabe, M., Kakushima, K., Hoshii, T., Furukawa, K., Nakajima, A., Satoh, K., Matsudai, T., Saraya, T., Takakura, T., Itou, K., Fukui, M., Suzuki, S., Takeuchi, K., Muneta, I., Wakabayashi, H., Nishizawa, S., Tsutsui, K., Hiramoto, T., Ohashi, H., Iwai, H.
Format Conference Proceeding
LanguageEnglish
Published The Japan Society of Applied Physics 23.09.2020
Subjects
carrier-carrier scattering
IGBT
injection enhancement effect
Insulated gate bipolar transistors
Predictive models
Scattering
Semiconductor device measurement
Semiconductor process modeling
Silicon
Solid modeling
TCAD simulation
three-dimension current flow
trench-gate
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Summary:Technology CAD (TCAD) has been recognized as a powerful design tool for Si insulated gate bipolar transistors (IGBTs). Here, physical models, such as a mobility model for carrier-carrier scattering, were investigated for a predictive TCAD. Simulated currentvoltage characteristics of the trench-gate IGBTs were compared with measurements. The difference between 3D- and 2D-TCAD simulations was observed in a high current region, which was explained by a bias-dependent current flow. A test element group (TEG) for separation of the emitter currents for holes and electrons was also determined as effective for calibration of lifetime model parameters.
ISSN:1946-1577
DOI:10.23919/SISPAD49475.2020.9241627