A Source Pocket Doping in PNPN-DG TFET to Preclude Ambipolar Current - Two Dimensional Simulation

A 2D TFET with two symmetrical source pocket doping is presented in this paper. The structure of TFET proposed here is symmetric having double gate along with two heavily doped pocket regions at the source that enhances the source tunnelling which in turn increases the ON current and provides neglig...

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Bibliographic Details
Published in2020 8th International Electrical Engineering Congress (iEECON) pp. 1 - 4
Main Authors Goswami, Bijoy, Barman, Lavlesh Kumar, Jana, Abir, Day, Anup, Reja, Wasim, Sarkar, Subir Kumar
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2020
Subjects
I ON /I OFF
quantum tunneling effect
semi-classical effect
subthreshold slope (SS)
TFET
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Summary:A 2D TFET with two symmetrical source pocket doping is presented in this paper. The structure of TFET proposed here is symmetric having double gate along with two heavily doped pocket regions at the source that enhances the source tunnelling which in turn increases the ON current and provides negligible ambipolar conduction, which is the ramification of conventional TFET structures along with its suitability for low power applications. The gate length is varied to 24nm, 14nm and 7nm and these three structures are compared. Nevertheless, in all the three cases, Silvaco Atlasbased simulation is performed where the channel length is considered 24nm. The proposed structure(s) is suitably validated with simulated outcomes. All the simulations in this work are accomplished with Silvaco, Atlas.
DOI:10.1109/iEECON48109.2020.229575