High Temperature Design of a GaN Based Modular Integrated Drive with Natural Cooling Using Metal Clad PCBs
This paper proposes a high temperature design of an integrated three phase inverter using direct drive GaN HEMT devices and metal clad PCBs (MCPCB). The inverter features a modular design approach, utilizing a 600 V direct drive GaN device with integrated overcurrent and overtemperature protection....
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Published in | 2019 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 4012 - 4017 |
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Main Authors | , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.09.2019
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Subjects | |
Online Access | Get full text |
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Summary: | This paper proposes a high temperature design of an integrated three phase inverter using direct drive GaN HEMT devices and metal clad PCBs (MCPCB). The inverter features a modular design approach, utilizing a 600 V direct drive GaN device with integrated overcurrent and overtemperature protection. Aluminum based PCBs with high thermal conductivity are also used to achieve a natural cooling solution with only air convection at an ambient temperature of up to 95°C Thermal . simulations are performed to verify the thermal performance of the system. The inverter was built and experimentally tested in a thermal chamber to verify the drive performance at high temperatures. The design achieves a continues power of 1.8 kW. Peak efficiencies of 99.8% and 99.45% are achieved at room temperature and 95°C respectively. |
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ISSN: | 2329-3748 |
DOI: | 10.1109/ECCE.2019.8912701 |