SOTF-BTI - an S-Parameters based on-the-fly Bias Temperature Instability Characterization Method

• Published in: 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) pp. 1 - 5
• Main Authors: Chohan, Talha, Slesazeck, Stefan, Krause, Gernot, Trommer, Jens, Lehmann, Steffen, Mikolajick, Thomas
• Format: Conference Proceeding
• Language: English
• Published: IEEE 20.07.2020
• Subjects: Bias temperature instability; Degradation; FDSOI; Logic gates; NBTI; on-the-fly measurement; PBTI; RF-Reliability; S-Parameters; Scattering parameters; Stress; Stress measurement; Temperature measurement; Voltage measurement

Among various device degradation modes, bias temperature instability (BTI) is one of the key reliability concerns. Throughout the years the measurement of true BTI degradation which incorporate fast recovery component is a key focus for the faster characterization techniques. In this study a novel S...