SOTF-BTI - an S-Parameters based on-the-fly Bias Temperature Instability Characterization Method

Among various device degradation modes, bias temperature instability (BTI) is one of the key reliability concerns. Throughout the years the measurement of true BTI degradation which incorporate fast recovery component is a key focus for the faster characterization techniques. In this study a novel S...

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Bibliographic Details
Published in2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) pp. 1 - 5
Main Authors Chohan, Talha, Slesazeck, Stefan, Krause, Gernot, Trommer, Jens, Lehmann, Steffen, Mikolajick, Thomas
Format Conference Proceeding
LanguageEnglish
Published IEEE 20.07.2020
Subjects
Bias temperature instability
Degradation
FDSOI
Logic gates
NBTI
on-the-fly measurement
PBTI
RF-Reliability
S-Parameters
Scattering parameters
Stress
Stress measurement
Temperature measurement
Voltage measurement
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Summary:Among various device degradation modes, bias temperature instability (BTI) is one of the key reliability concerns. Throughout the years the measurement of true BTI degradation which incorporate fast recovery component is a key focus for the faster characterization techniques. In this study a novel S-Parameter based BTI characterization method is demonstrated. This technique distinguishes itself from other BTI characterization methods, that it does not constitute any recovery component as the degradation is monitored without disengaging the stress condition while using the standard RF measurement setup.
ISSN:1946-1550
DOI:10.1109/IPFA49335.2020.9260732