New nanotechnology structures CNTFET GaAs

• Published in: 2019 8th International Conference on Renewable Energy Research and Applications (ICRERA) pp. 799 - 803
• Main Authors: Benbouza, M.S., Hocine, D., Zid, Y., Benbouza, A.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.11.2019
• Subjects: C-CNTFET; Carbon nanotubes; CNTFET; CNTFETs; Computational modeling; GaAs; Inductance; Inductance active; Integrated circuit modeling; Nanotechnology; Nanotube carbon; Resistance
• ISSN: 2572-6013
• DOI: 10.1109/ICRERA47325.2019.8997103

The nanotechnology market has reached several hundred billion USD. This market is mainly due to the physical characteristics of the CNTs ((Nano Tube Carbon). The conductivity of CNT is up 80 times higher than the copper and the mobility charge of electrons and holes values is greater than 100.10 3 cm 2 /Vs compared to 1,510 3 cm 2 /Vs for amorphous silicon used in the electronics industry. The current density greater than 10 9 . This the three parameters offer CNT good proprieties. This parameter gives to the impedance of CNT and nanotube-carbon transistors CNTFET and C-CNTFET a new structure depending as function radius and length of the carbon nanotube. This impedance is also function of the internal physics parameters as capacity's parasites and resistances of the input gate source and drain of the transistor component. In this we study, and presents new inductances and resistances of the structures based on nanotube-carbon transistors CNTFET and C-CNTFET. we proving us this nano-structure offers low energy consumption, compared them with classical structures, transistors CNTFET and C-CNTFET.