Moisture diffusion rate in an ultra-low-k dielectric and its effect on the dielectric reliability

Moisture diffusion behavior in an ultra-low-k (ULK) dielectric has been studied using a ring oscillator. The diffusion constant of water in the ULK dielectric was found to be temperature and moisture concentration dependent and can be modeled as an Arrhenius function with an activation energy of 0.2...

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Bibliographic Details
Published in2021 IEEE International Reliability Physics Symposium (IRPS) pp. 1 - 7
Main Authors Duan, N., Subramanian, V., Olthof, E., Eggenkamp, P., van Soestbergen, M., Braspenning, R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2021
Subjects
Breakdown voltage
Degradation
Materials reliability
Moisture
Ring oscillators
Temperature dependence
Temperature sensors
time-dependent dielectric breakdown
ultra-low-k
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Summary:Moisture diffusion behavior in an ultra-low-k (ULK) dielectric has been studied using a ring oscillator. The diffusion constant of water in the ULK dielectric was found to be temperature and moisture concentration dependent and can be modeled as an Arrhenius function with an activation energy of 0.27 eV. Furthermore, the impact of moisture on dielectric reliability was investigated by a comb-meander test structure without edge seals. The experimental results showed that moisture could easily be absorbed by an ULK dielectric. The absorbed moisture cannot be completely desorbed with high temperature dry baking. The presence of moisture has significant impact on the dielectric breakdown voltage and the time-dependent dielectric breakdown (TDDB) lifetime.
ISSN:1938-1891
DOI:10.1109/IRPS46558.2021.9405157