Teaching how to characterize and implement high speed power devices for tomorrow's engineers

This paper describes the evolution of a power electronics class at Master level (second year), to comply with the new trends of this science. Indeed, the switching speed of power semiconductor devices -especially wide bandgap devices- is continually increasing and, the knowledge and comprehension of...

Full description

Saved in:
Bibliographic Details
Published in2019 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 404 - 411
Main Authors Schanen, Jean-Luc, Hanna, R., Chazal, H., Avenas, Yvan, Sarrazin, Benoit, Freitas, Caio, Bikinga, Wendpanga, Derbey, A., Flury, S., Dumas, F., Lefranc, P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2019
Subjects
Education
EMC
Gallium nitride
Losses Measurement
Magnetics
MOSFET
Optical switches
Power electronics
Probes
Semiconductor devices
Voltage measurement
Online AccessGet full text

Cover

More Information
Summary:This paper describes the evolution of a power electronics class at Master level (second year), to comply with the new trends of this science. Indeed, the switching speed of power semiconductor devices -especially wide bandgap devices- is continually increasing and, the knowledge and comprehension of switching mechanisms is absolutely necessary to design power converters. Apart from theoretical lectures, several lab works have been specifically developed, to use these devices at their rated operating point. Five different themes are studied: device characterization (bare dies), switching waveforms, losses characterization, thermal design, ElectroMagnetic Compatibility and magnetics design.
ISSN:2329-3748
DOI:10.1109/ECCE.2019.8912181