CMOS integrated system for Terahertz Detection

We present the study of a new structure for integrated rectifier, realized with standard CMOS technology, suitable to detect the terahertz radiation, at room temperature. The structure consists of a capacitive rectenna, designed as a patch antenna realized with the last metal layer of the CMOS proce...

Full description

Saved in:
Bibliographic Details
Published in2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) pp. 1 - 2
Main Authors Giusto, R., Centurelli, F., Palma, F.
Format Conference Proceeding
LanguageEnglish
Published IEEE 08.11.2020
Subjects
Logic gates
Rectifiers
Semiconductor detectors
Substrates
Terahertz radiation
Transistors
Online AccessGet full text

Cover

More Information
Summary:We present the study of a new structure for integrated rectifier, realized with standard CMOS technology, suitable to detect the terahertz radiation, at room temperature. The structure consists of a capacitive rectenna, designed as a patch antenna realized with the last metal layer of the CMOS process. A whisker reaches the gate of a MOS-FET transistor from the antenna, obtained with a standard via. Rectification can be obtained by the self-mixing effect occurring into the plasma waves generate in the substrate, underneath the gate. The proposed solution can be integrated with existing imaging systems, since it does not requires scaling toward very narrow and costly technological node.
ISSN:2162-2035
DOI:10.1109/IRMMW-THz46771.2020.9370686