Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx With H2 Plasma Treatment

• Published in: IEEE electron device letters Vol. 41; no. 4; pp. 529 - 532
• Main Authors: Ruan, Dun-Bao, Chang-Liao, Kuei-Shu, Yi, Shih-Han, Yeh, Hsin-I, Liu, Guan-Ting
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.04.2020; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Current leakage; Equivalence; GeOₓ; Germanium; Germanium oxides; Hafnium; Hydrogen plasma; hydrogen plasma treatment; Leakage current; Logic gates; MOS devices; Oxidation; oxidation state; pGe MOS device; Plasmas; Substrates; Thickness; Valence; Zirconium

A low equivalent-oxide-thickness of 0.58 nm and a low gate leakage current density of <inline-formula> <tex-math notation="LaTeX">\sim 2\times 10^{-{5}} </tex-math></inline-formula> A/cm 2 at V G = V FB - 1 V in p-substrate Ge (pGe) MOS device can be simultaneously...