Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx With H2 Plasma Treatment

A low equivalent-oxide-thickness of 0.58 nm and a low gate leakage current density of <inline-formula> <tex-math notation="LaTeX">\sim 2\times 10^{-{5}} </tex-math></inline-formula> A/cm 2 at V G = V FB - 1 V in p-substrate Ge (pGe) MOS device can be simultaneously...

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Bibliographic Details
Published inIEEE electron device letters Vol. 41; no. 4; pp. 529 - 532
Main Authors Ruan, Dun-Bao, Chang-Liao, Kuei-Shu, Yi, Shih-Han, Yeh, Hsin-I, Liu, Guan-Ting
Format Journal Article
LanguageEnglish
Published New York IEEE 01.04.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Current leakage
Equivalence
GeOₓ
Germanium
Germanium oxides
Hafnium
Hydrogen plasma
hydrogen plasma treatment
Leakage current
Logic gates
MOS devices
Oxidation
oxidation state
pGe MOS device
Plasmas
Substrates
Thickness
Valence
Zirconium
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Summary:A low equivalent-oxide-thickness of 0.58 nm and a low gate leakage current density of <inline-formula> <tex-math notation="LaTeX">\sim 2\times 10^{-{5}} </tex-math></inline-formula> A/cm 2 at V G = V FB - 1 V in p-substrate Ge (pGe) MOS device can be simultaneously achieved by a hydrogen plasma (H * ) treatment on GeO 2 interfacial layer (IL). It is found that the removal of GeO x with low oxidation state in GeO 2 IL play crucial roles on electrical characteristics of pGe MOS device. Through a H * treatment, the electrical and reliability characteristics are improved by a GeO 2 IL with high oxidation state. Therefore, a GeO 2 IL with H * treatment is promising for high performance pGe MOS devices.
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content type line 14
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2020.2971635