APA (7th ed.) Citation

Ruan, D., Chang-Liao, K., Yi, S., Yeh, H., & Liu, G. (2020). Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx With H2 Plasma Treatment. IEEE electron device letters, 41(4), 529-532. https://doi.org/10.1109/LED.2020.2971635

Chicago Style (17th ed.) Citation

Ruan, Dun-Bao, Kuei-Shu Chang-Liao, Shih-Han Yi, Hsin-I Yeh, and Guan-Ting Liu. "Low Equivalent Oxide Thickness and Leakage Current of PGe MOS Device by Removing Low Oxidation State in GeOx With H2 Plasma Treatment." IEEE Electron Device Letters 41, no. 4 (2020): 529-532. https://doi.org/10.1109/LED.2020.2971635.

MLA (9th ed.) Citation

Ruan, Dun-Bao, et al. "Low Equivalent Oxide Thickness and Leakage Current of PGe MOS Device by Removing Low Oxidation State in GeOx With H2 Plasma Treatment." IEEE Electron Device Letters, vol. 41, no. 4, 2020, pp. 529-532, https://doi.org/10.1109/LED.2020.2971635.