Channel Length Scaling Limit for LDMOS Field-Effect Transistors: Semi-classical and Quantum Analysis

We find a fundamental limit of channel-length scaling for Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) FETs. We optimize a set of devices with different channel lengths, from 10 nm to 100 nm, through an optimization algorithm to meet a pre-determined criterion for drain-to-source subthreshol...

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Bibliographic Details
Published in2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) pp. 443 - 446
Main Authors Saadat, Ali, Vyas, Pratik B., Put, Maarten L. Van de, Fischetti, Massimo V., Edwards, Hal, Vandenberghe, William G.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2020
Subjects
channel-length scaling
Degradation
Field effect transistors
Impurities
Integrated circuits
LDMOS
on-resistance
optimization
Performance evaluation
quantum transport
scaling limit
Scattering
Tunneling
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Summary:We find a fundamental limit of channel-length scaling for Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) FETs. We optimize a set of devices with different channel lengths, from 10 nm to 100 nm, through an optimization algorithm to meet a pre-determined criterion for drain-to-source subthreshold leakage-current and breakdown voltage. We identify an optimum channel length of 40 nm for both 5V and 3.3V planar LDMOS devices. To assess the possible importance of source-to-drain tunneling in short-channel LDMOS devices, we also perform a quantum mechanical study of 5 nm to 15 nm channel length LDMOS devices. We find that classical effects, rather than quantum tunneling, determine the scaling limit of LDMOS.
ISSN:1946-0201
DOI:10.1109/ISPSD46842.2020.9170157